The group of Integrated Devices and Systems (IDS) at University of Twente has a vacancy for a Postdoc to work on CMOS transistors and their wearout due to stress-induced leakage current. The aim of the project is to investigate self-repair (recovery) of stress-induced leakage current and to formulate a model to describe this effect, in order to improve contemporary reliability estimates for CMOS electronics. The group of Integrated Devices and Systems (IDS) is part of the Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS) and the MESA+ Institute for Nanotechnology. The aim of the research is experimentation, combined with analysis and model development.
- Applicant must be highly motivated, positive and hardworking researcher (F/M) with a PhD degree on a topic related to CMOS device reliability.
- Excellent experimental skills are a prerequisite.
- Candidates with good team spirit and multidisciplinary curiosity, who like to work in an internationally oriented environment where many cultures meet.
- Proficiency in English is a requirement.
Duration: A postdoc position for 30 months;
Remuneration: Gross salary ranging from € 3.255 to € 4.274 per month, plus holiday allowance (8%) and end-of-year bonus (8.3%)
Apply online including an application/motivation letter, emphasizing your specific interest, qualifications and motivation to apply for this position, a detailed CV (resume) and a publication list.
|Organization||University of Twente|
|Subject areas||Electrical Engineering, Mathematics and Computer Science|
|Fellowship amount||Mentioned above|
|Eligibility||Open to all nationalities|
|Deadline||1 March 2020|