Semiconductor device modeling and optimization postdoctoral 3405 views

The Emerging Radio Systems Group (EmRG) is pursuing to develop compact and behavioural models that can accurately predict the behaviour of deep-submicron, heterostructure semiconductor devices used in high frequency radiocommunication circuitry.

This project is an essential part of a larger research initiative geared towards the realization of 5G, the next generation of communication technologies.

EmRG is actively seeking a postdoctoral fellow or an experienced research associate for this project. A 1 year contract with competitive funding is available, ideally starting in January 2017, and may be renewed based on performance.

The ideal applicant is a highly self-motivated individual with a strong theoretical background in semiconductor device physics, experience with simulation software, and an aptitude for carrying out research projects and delivering results with minimal supervision.

Key responsibilities:

  • Conducting theoretical studies of electrical and electro-thermal behavior of Gallium Nitride (GaN) devices
  • Developing multi-physics-based compact models for GaN devices targeting millimetre-wave frequency applications
  • Performing theoretical analyses and simulations, analysing results and provide interpretations
  • Conducting laboratory tests on semiconductor devices using a thermal analyser and a probe station
  • Publishing or presenting research outcomes in IEEE journals, conferences or reports for industry partners
  • Communicating and collaborating with other research personnel working on related projects; mentoring and guiding graduate students when appropriate.

Position requirements:

  • Applicants with PhD in Physics, Electrical Engineering or related field, with strong background in solid-state physics and thermal physics will be considered for a postdoctoral position
  • Candidates with an MASc and relevant experience will be considered for a research associate position
  • In-depth knowledge of GaN-based High-Electron-Mobility-Transistors (HEMTs) and electrothermal modelling
  • Proficiency with physics-based device simulation tools (e.g. Sentaurus) and data analysis
  • Experience with thermal image analysis and probe station measurements is an asset
  • Familiarity with radio-frequency and millimetre-wave frequency integrated circuits is an asset
  • Familiarity with circuit and system simulation tools (e.g. Cadence, Advanced Design System) is an asset
  • Strong written and oral communication skills preferred; Among non-native English speakers, preference will be given to candidates with an IELTS score of 7.5 or higher (TOEFL score of 100 or higher).
  • All qualified individuals including women, members of visible minorities, aboriginal peoples and persons with disabilities.
  • All qualified candidates are encouraged to apply; however Canadians and permanent residents will be given priority.

How to Apply

  • Interested applicants should email a complete application package to, consisting of the following:
  • A cover letter stating your research interests and experience, and relating them to the research project described above.
  • A curriculum vitae, with 3 academic or professional references
  • An electronic copy of your most significant research publication (journal or conference publication)
  • Please ensure all items are attached to the email in .docx or .pdf format, and include the position title in the subject line. We will respond to eligible candidates within a reasonable time frame. The call for applications will remain until the position is filled.

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